1/8 december 2000 stv160nf02la n-channel 20v - 0.0018 w - 160a powerso-10 stripfet? power mosfet (1) v dd = 35v, i d = 45a, r g = 22 w , l = 330 m h, starting t j =25 c (**)limited only maximum junction temperature allowed by powerso-10 n typical r ds (on) = 0.0018 w n low threshold drive n ultra low on-resistance n ultra fast switching n 100% avalanche tested n very low gate charge n low profile, very low parasitic inductance powerso-10 package description the stv160nf02la represents the second gen- eration of application specific stmicroelectronics well established stripfet? process based on a very unique strip layout design. the resulting mosfet shows unrivalled high packing density with ultra low on-resistance and superior switching charactestics. process simplification also trans- lates into improved manufacturing reproducibility. this device is particularly suitable for high current, low voltage switching application where efficiency is crucial applications n buck converters in high performance telecom and vrms dc- dc converters absolute maximum ratings ( l ) pulse width limited by safe operating area note: marking will be stv160nf02al type v dss r ds(on) i d stv160nf02la 20 v < 0.0027 w 160 a symbol parameter value unit v ds drain-source voltage (v gs = 0) 20 v v dgr drain-gate voltage (r gs = 20 k w ) 20 v v gs gate- source voltage 15 v i d (**) drain current (continuos) at t c = 25c 160 a i d drain current (continuos) at t c = 100c 11 3 a i dm ( l ) drain current (pulsed) 640 a p tot total dissipation at t c = 25c 210 w derating factor 1.4 w/c e as (1) single pulse avalanche energy 330 mj t stg storage temperature C65 to 175 c t j max. operating junction temperature 175 c powerso-10 1 10 internal schematic diagram connection diagram (top view)
stv160nf02la 2/8 thermal data electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic rthj-case thermal resistance junction-case max 0.71 c/w rthj-amb thermal resistance junction-ambient max 50 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 20 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 10 a i gss gate-body leakage current (v ds = 0) v gs = 15 v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250a 1v r ds(on) static drain-source on resistance v gs = 10 v, i d = 80 a v gs = 10 v, i d = 45 a v gs = 8 v, i d = 80 a v gs = 5 v, i d = 40 a v gs = 10 v, i d =80 a;t j = 175 c v gs = 8 v, i d =80 a; t j = 175 c v gs = 5 v, i d =40 a; t j = 125 c 1.8 1.76 1.9 3.8 2.7 2.7 3.7 6.4 6 8 14 m w m w m w m w m w m w m w i d(on) on state drain current v ds > i d(on) x r ds(on)max, v gs =10v 160 a symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i d = 80a 210 s r g gate resistance v ds = 0 v, f = 1 mhz, v gs = 0 1.1 w c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 15 v, f = 1 mhz, v gs = 0 5500 3210 750 pf pf pf c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 0 v, f = 1 mhz, v gs = 0 8400 14500 5800 pf pf pf l s internal source inductance from the lead end (6mm from package body) to the die center 3nh l d internal drain inductance not available on surface mounting package
3/8 stv160nf02la electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 15 v, i d = 80 a r g = 4.7 w v gs = 10v (see test circuit, figure 3) 30 ns t r rise time 650 ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 16 v, i d = 160 a, v gs = 10 v 130 20 54 175 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off-delay time fall time v dd = 15 v, i d = 80 a, r g =4.7 w, v gs = 10 v (see test circuit, figure 5) 105 200 ns ns t d(off) t r(voff) t f t c turn-off delay time off-voltage rise time fall time cross-over time vclamp = 16 v, i d = 40 a r g =4.7 w, v gs = 10v 90 45 125 180 ns ns ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 160 a i sdm (1) source-drain current (pulsed) 640 a v sd (2) forward on voltage i sd = 160 a, v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 160a, di/dt = 100a/s, v dd = 15v, t j = 25c (see test circuit, figure 5) 90 225 5 ns nc a safe operating area thermal impedance
stv160nf02la 4/8 tranconductance output characteristics gate charge vs gate-source voltage capacitance variations tranfer characteristics static drain-source on resistance
5/8 stv160nf02la normalized on resistance vs temperature source-drain diode forward characteristics basic schematic for motherboard vrm whith synchronous rectification basic schematic mosfets switch used in secondary side of a froward convert normalized gate thereshold voltage vs temp.
stv160nf02la 6/8 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/8 stv160nf02la dim. mm inch min. typ. max. min. typ. max. a 3.35 3.65 0.132 0.144 a1 0.00 0.10 0.000 0.004 b 0.40 0.60 0.016 0.024 c 0.35 0.55 0.013 0.022 d 9.40 9.60 0.370 0.378 d1 7.40 7.60 0.291 0.300 e 1.27 0.050 e 9.30 9.50 0.366 0.374 e1 7.20 7.40 0.283 0.291 e2 7.20 7.60 0.283 0.300 e3 6.10 6.35 0.240 0.250 e4 5.90 6.10 0.232 0.240 f 1.25 1.35 0.049 0.053 h 0.50 0.002 h 13.80 14.40 0.543 0.567 l 1.20 1.80 0.047 0.071 q 1.70 0.067 a 0 o 8 o detail "a" plane seating a l a1 f a1 h a d d1 = = = = = = e4 0.10 a e1 e3 c q a = = b b detail "a" seating plane = = = = e2 6 10 5 1 e b he m 0.25 = = = = 0068039-c powerso-10 mechanical data
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